Infineon announces first 300 mm power silicon carbide wafer
Infineon, the chip maker, has put out a press release (reference infpr202611-028) titled "The first 300-millimeter power silicon carbide (SiC) wafer". The headline announces a manufacturing milestone: a power SiC wafer at a diameter of 300 mm.
That is all that can be said with confidence. The body of the release was not retrievable; what came back was Infineon's site navigation, which lists product families and application areas. It includes a silicon carbide section with CoolSiC MOSFETs, from 400 V / 440 V parts up to 3300 V parts, plus SiC diodes and gate driver ICs for SiC MOSFETs. That menu shows where SiC sits in Infineon's catalogue, but it says nothing about the new wafer.
So the retelling stops at the title. There are no wafer specifications (thickness, defect density, yield, or whether it is a substrate or an epitaxial wafer), no production timeline, customers, fab location or volume plans, no executive quotes, and no release date. It is also not stated whether the claim of "first" is industry-wide or limited to Infineon.
Key facts
- Infineon's press release infpr202611-028 is titled "The first 300-millimeter power silicon carbide (SiC) wafer".
- The headline claim is a 300 mm wafer diameter for power SiC.
- The release body was not retrievable, so no specifications, yield figures or timelines are verified.
- It is not stated whether "first" means first in the industry or first for Infineon.
Why it matters
The headline points to a step up in wafer size for power silicon carbide, to 300 mm. The release body was not retrievable, so what the step means in practice, such as cost per chip or capacity, is not something the available material says.
Who it affects
The only audience the material points to is Infineon's own business: its site navigation lists CoolSiC MOSFETs, SiC diodes and gate driver ICs for SiC MOSFETs among its power products. Customers, partners and fab sites are not named in what is available.
How to use it
Nothing here can be used yet. No product availability, ordering information, pricing or sampling terms are available. Anyone who needs the specifics should read the full Infineon press release (infpr202611-028) once its body is accessible.
How solid is it
The claim comes from Infineon itself, in a first-party press release, but the primary source is unavailable beyond its title. Nothing about the wafer has been checked. The article body is not available, and it is not stated whether the claim of "first" is industry-wide or limited to Infineon.
Risks and caveats
A headline of this kind gives no wafer specifications: thickness, defect density, yield, and whether it is a substrate or an epitaxial wafer are all unknown here. No production timeline or volume plans are available either, so it is unclear whether this is a demonstration or a product on the way to the market.